Publication Information

Title: Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure

Type: Journal

Info: Advanced Functional Materials, Volume 24, Issue 32, 2014, Pages 5086--5095

Date: 2014-05-26

DOI: http://dx.doi.org/10.1002/adfm.201400064

Author Information

Name

Institution

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Films

Plasma Ta2O5 using Unknown

Deposition Temperature Range N/A

Thermal HfO2 using Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

438

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