Publication Information

Title: Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors

Type: Journal

Info: IEEE Electron Device Letters Volume:36, Issue:4 Page(s): 315 - 317

Date: 2015-02-06

DOI: http://dx.doi.org/10.1109/LED.2015.2400472

Author Information

Name

Institution

Chalmers University of Technology

Chalmers University of Technology

III-V Lab

III-V Lab

III-V Lab

III-V Lab

Chalmers University of Technology

III-V Lab

Chalmers University of Technology

Chalmers University of Technology

Films

Plasma Al2O3 using Unknown

Deposition Temperature Range N/A

75-24-1

7782-44-7

Thermal Al2O3 using Unknown

Deposition Temperature Range N/A

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Passivation

Notes

463

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