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Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
Type:
Journal
Info:
Nanoscale 2015, vol. 7, no. 24, pp. 10781-10789
Date:
2015-05-25
Author Information
| Name | Institution |
|---|---|
| Amirhasan Nourbakhsh | IMEC |
| Christoph Adelmann | IMEC |
| Yi Song | MIT |
| Chang Seung Lee | Samsung Advanced Institute of Technology |
| Inge Asselberghs | IMEC |
| Cedric Huyghebaert | IMEC |
| Simone Brizzi | Brandenburg University of Technology |
| Massimo Tallarida | Brandenburg University of Technology |
| Dieter Schmeißer | Brandenburg University of Technology |
| Sven Van Elshocht | IMEC |
| Marc Heyns | IMEC |
| Jing Kong | MIT |
| Tomas Palacios | MIT |
| Stefan De Gendt | IMEC |
Films
Film/Plasma Properties
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| Graphene |
Notes
| O2 plasma was used to create sites on the graphene prior to thermal ALD of Al2O3. |
| 389 |