Publication Information

Title: Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor

Type: Conference Proceedings

Info: ECS Trans. 2014 volume 61, issue 4, 345-351

Date: 2014-05-11

DOI: http://dx.doi.org/10.1149/06104.0345ecst

Author Information

Name

Institution

Meiji University

Films

Plasma Al2O3 using Unknown

Deposition Temperature = 300C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Threshold Voltage

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Mobility

Unknown

Unknown

Substrates

Keywords

TFT, Thin Film Transistor

Gate Dielectric

Notes

PEALD Al2O3 for IGZO TFT gate dielectric.

262

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

Follow plasma-ald.com

Follow @PlasmaALDGuy Tweet

Shortcuts



© 2014-2017 plasma-ald.com