Publication Information

Title: Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3

Type: Journal

Info: Applied Physics Letters 97, 143502 (2010)

Date: 2010-09-02

DOI: http://dx.doi.org/10.1063/1.3492847

Author Information

Name

Institution

The Pennsylvania State University

The Pennsylvania State University

University of Texas at Dallas

The Pennsylvania State University

The Pennsylvania State University

Virginia Tech

University of Texas at Dallas

The Pennsylvania State University

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

The Pennsylvania State University

Films

Thermal Al2O3 using Unknown

Deposition Temperature = 300C

75-24-1

7732-18-5

Plasma Al2O3 using Unknown

Deposition Temperature = 200C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Capacitance

C-V, Capacitance-Voltage Measurements

HP 4285A LCR

Interface Trap Density

C-V, Capacitance-Voltage Measurements

HP 4285A LCR

Substrates

GaSb

Keywords

Plasma vs Thermal Comparison

Notes

704

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