Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning

Type:
Journal
Info:
Microelectronic Engineering 86 (2009) 1529 - 1535
Date:
2009-03-10

Author Information

Name Institution
Matty CaymaxIMEC
Guy BrammertzIMEC
Annelies DelabieIMEC
Sonja SionckeIMEC
Dennis LinIMEC
Marco ScarrozzaIMEC
Geoffrey PourtoisIMEC
Wei-E WangIMEC
Marc MeurisIMEC
Marc HeynsIMEC

Films

Thermal HfO2

Hardware used: Unknown


CAS#: 7732-18-5


Thermal Al2O3


Plasma Al2O3


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

GaAs

Notes

300C deposition temperatures inferred from text. Might be wrong.
746