The publication database currently has 1700 entries.
Use Advanced Search for more complex searches
Innatiux is a retained executive recruiting firm with a focus on the search and placement of proven leaders for client companies in the field of high-tech capital equipment and analytical instrumentation. We are seeking WW technical and business leaders with a background in semiconductor deposition to fill confidential senior and executive level positions with our clients. Visit us at: www.innatiux.com
CeO2 Doping of Hf0.5Zr0.5O2 Thin Films for High Endurance Ferroelectric Memories
Type:
Journal
Info:
Adv. Elec. Matls. Vol 8, Iss 7 July 2022 2101258
Date:
2022-02-15
Author Information
| Name | Institution |
|---|---|
| Zhouchangwan Yu | Stanford University |
| Balreen Saini | Stanford University |
| Pei-Jean Liao | Taiwan Semiconductor Manufacturing Company |
| Yu-Kai Chang | Taiwan Semiconductor Manufacturing Company |
| Duen-Huei Hou | Taiwan Semiconductor Manufacturing Company |
| Chih-Hung Nien | Taiwan Semiconductor Manufacturing Company |
| Yu-Chuan Shih | Taiwan Semiconductor Manufacturing Company |
| Sai Hooi Yeong | Taiwan Semiconductor Manufacturing Company |
| Valeri Afanas'ev | KU Leuven |
| Fei Huang | Stanford University |
| John D. Baniecki | SLAC National Accelerator Laboratory |
| Apurva Mehta | SLAC National Accelerator Laboratory |
| Chih-Sheng Chang | Taiwan Semiconductor Manufacturing Company |
| H.-S. P. Wong | Stanford University |
| Wilman Tsai | Stanford University |
| Paul C. McIntyre | Stanford University |
Films
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Polarization
Analysis: P-V, Polarization-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(100) |
Notes
| 1697 |