Publication Information

Title: Properties of HfAlO film deposited by plasma enhanced atomic layer deposition

Type: Journal

Info: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Volume 307, 15 July 2013, Pages 463-467

Date: 2012-12-24

DOI: http://dx.doi.org/10.1016/j.nimb.2012.12.102

Author Information

Name

Institution

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Films

Plasma HfAlOx using Unknown

Deposition Temperature = 160C

352535-01-4

75-24-1

7782-44-7

Plasma HfO2 using Unknown

Deposition Temperature = 160C

352535-01-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Interfacial Layer

TEM, Transmission Electron Microscope

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Unknown

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Unknown

Interface State Density

C-V, Capacitance-Voltage Measurements

Unknown

Substrates

Keywords

Notes

676

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