Publication Information

Title: Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers

Type: Journal

Info: J. Phys. D: Appl. Phys. 47 455304 2014

Date: 2014-09-29

DOI: http://dx.doi.org/10.1088/0022-3727/47/45/455304

Author Information

Name

Institution

University of Electronic Science and Technology of China

University of Electronic Science and Technology of China

University of Electronic Science and Technology of China

University of Electronic Science and Technology of China

University of Electronic Science and Technology of China

University of Electronic Science and Technology of China

University of Electronic Science and Technology of China

University of Electronic Science and Technology of China

Films

Plasma Al2O3 using Unknown

Deposition Temperature = 120C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Si(100)

Keywords

High-k Dielectric Thin Films

Notes

PEALD Al2O3 as buffer layer for VO2 sputter deposition.

297

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