Publication Information

Title: Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer

Type: Journal

Info: Microelectronic Engineering 147 (2015) 67 - 71

Date: 2015-04-06

DOI: http://dx.doi.org/10.1016/j.mee.2015.04.026

Author Information

Name

Institution

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

Films

Other HfON using Unknown

Deposition Temperature Range N/A

7732-18-5

Other HfON using Unknown

Deposition Temperature Range N/A

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Unknown

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Unknown

On/Off Current Ratio

Unknown

Unknown

Subthreshold Swing

Unknown

Unknown

Interfacial Layer

Unknown

Unknown

Substrates

Silicon

Keywords

Notes

465

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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