Publication Information

Title: Device Performances Related to Gate Leakage Current in Al2O3/AlGaN/GaN MISHFETs

Type: Journal

Info: JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.14, NO.5, OCTOBER, 2014

Date: 2014-07-30

DOI: http://dx.doi.org/10.5573/JSTS.2014.14.5.601

Author Information

Name

Institution

Kyungpook National University

Films

Plasma Al2O3 using Unknown

Deposition Temperature = 450C

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

204

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