Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors

Type:
Journal
Info:
Microelectronic Engineering 87 (2010) 301 - 305
Date:
2009-06-22

Author Information

Name Institution
T. BertaudUniversité de Savoie
C. BermondUniversité de Savoie
T. LacrevazUniversité de Savoie
Christophe ValléeFrench National Centre for Scientific Research (CNRS)
Y. MorandSTMicroelectronics
B. FléchetUniversité de Savoie
A. FarcySTMicroelectronics
Mickaël Gros-JeanSTMicroelectronics
S. BlonkowskiSTMicroelectronics

Films


Plasma HfO2

Hardware used: Unknown


Film/Plasma Properties

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Conductance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Conductance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Conductance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

TiN
SiO2

Notes

Paper lists TEMAZr as the precursor but calls it "TriEthyl MethAcrylate de Zirconium".
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