Title: Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
Type: Conference Proceedings
Info: IEICE Tech. Rep., vol. 115, no. 329, ED2015-81, pp. 69-72, Nov. 2015.
IRAS, Infrared Reflection Absorption Spectroscopy
XPS, X-ray Photoelectron Spectroscopy
TMG adsorption at room temperature and NH3 plasma at 115C.
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