Publication Information

Title: Patterning of silicon nitride for CMOS gate spacer technology. III. Investigation of synchronously pulsed CH3F/O2/He plasmas

Type: Journal

Info: Journal of Vacuum Science & Technology B 32, 021807 (2014)

Date: 2014-02-18

DOI: http://dx.doi.org/10.1116/1.4867357

Author Information

Name

Institution

STMicroelectronics

STMicroelectronics

CEA - Grenoble

CEA - Grenoble

CEA - Grenoble

CEA - Grenoble

Films

Plasma SiNx using Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Silicon

Keywords

Notes

622

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