Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
Type:
Journal
Info:
Microelectronic Engineering 147 (2015) 108 - 112
Date:
2015-04-12
Author Information
Name | Institution |
---|---|
Mihaela I. Popovici | IMEC |
A. Redolfi | IMEC |
Marc Aoulaiche | Micron Technology Belgium |
J. A. van den Berg | University of Huddersfield |
B. Douhard | IMEC |
Johan Swerts | IMEC |
P. Bailey | University of Huddersfield |
B. Kaczer | IMEC |
Benjamin Groven | IMEC |
Johan Meersschaut | IMEC |
Thierry Conard | IMEC |
A. Moussa | IMEC |
Christoph Adelmann | IMEC |
Annelies Delabie | IMEC |
P. Fazan | Micron Technology Belgium |
Sven Van Elshocht | IMEC |
M. Jurczak | IMEC |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Characteristic: Interfacial Layer
Analysis: MEIS, Medium Energy Ion Scattering
Characteristic: Thickness
Analysis: MEIS, Medium Energy Ion Scattering
Characteristic: Microstructure
Analysis: MEIS, Medium Energy Ion Scattering
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Substrates
TiN |
SrTiO3 |
Notes
553 |