Publication Information

Title: AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film

Type: Journal

Info: physica status solidi (c) Volume 11, Issue 3-4, pages 953-956, April 2014

Date: 2014-05-04

DOI: http://dx.doi.org/10.1002/pssc.201300442

Author Information

Name

Institution

Hong Kong University of Science and Technology

Films

Plasma AlN using Unknown

Deposition Temperature = 300C

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

TFT, Thin Film Transistor

Notes

238

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