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Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
Type:
Journal
Info:
Microelectronic Engineering Volume 178, 25 June 2017, Pages 250-253
Date:
2017-06-25
Author Information
| Name | Institution |
|---|---|
| A. Chouprik | Moscow Institute of Physics and Technology |
| A. G. Chernikova | Moscow Institute of Physics and Technology |
| Andrey M. Markeev | Moscow Institute of Physics and Technology |
| V. Mikheev | Moscow Institute of Physics and Technology |
| D. V. Negrov | Moscow Institute of Physics and Technology |
| M. Spiridonov | Moscow Institute of Physics and Technology |
| Sergey S. Zarubin | Moscow Institute of Physics and Technology |
| A. Zenkevich | Moscow Institute of Physics and Technology |
Films
Film/Plasma Properties
Substrates
| HfZrO2 |
Notes
| 1049 |