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Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Microelectronic Engineering 215 (2019) 111013
Date:
2019-05-25
Author Information
| Name | Institution |
|---|---|
| Takashi Onaya | Meiji University |
| Toshihide Nabatame | National Institute for Materials Science (NIMS) |
| Naomi Sawamoto | Meiji University |
| Akihiko Ohi | National Institute for Materials Science (NIMS) |
| Norihiko Ikeda | National Institute for Materials Science (NIMS) |
| Takahiro Nagata | National Institute for Materials Science (NIMS) |
| Atsushi Ogino | Meiji University |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Remanent Polarization
Analysis: P-V, Polarization-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| TiN |
Notes
| Hf and Zr introduced as a cocktail of TEMAHf and TEMAZr. |
| 1692 |