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Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
Type:
Journal
Info:
IEEE Transactions on Electron Devices (Volume:61, Issue:8)
Date:
2015-06-19
Author Information
| Name | Institution |
|---|---|
| Quang Ho Luc | National Chiao Tung University |
| Edward Yi Chang | National Chiao Tung University |
| H. D. Trinh | National Chiao Tung University |
| Yueh Chin Lin | National Chiao Tung University |
| H. Q. Nguyen | National Chiao Tung University |
| Yuen-Yee Wong | National Chiao Tung University |
| Huy Binh Do | National Chiao Tung University |
| S. Salahuddin | National Chiao Tung University |
| Chenming Calvin Hu | University of California - Berkeley |
Films
Film/Plasma Properties
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| InGaAs |
Notes
| 557 |