Publication Information

Title: Symmetrical Al2O3-based passivation layers for p- and n-type silicon

Type: Conference Proceedings

Info: Solar Energy Materials and Solar Cells, Volume 131, December 2014, Pages 72-76, SI: SiliconPV 2014

Date: 2014-06-02

DOI: http://dx.doi.org/10.1016/j.solmat.2014.06.005

Author Information

Name

Institution

NaMLab gGmbH

Films

Thermal Al2O3 using Unknown

Deposition Temperature = 150C

75-24-1

7732-18-5

Thermal HfO2 using Unknown

Deposition Temperature = 150C

352535-01-4

7732-18-5

Plasma SiO2 using Unknown

Deposition Temperature = 150C

0-0-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Substrates

Keywords

Thin Film Solar Cell

Passivation

Notes

PEALD SiO2 and thermal ALD Al2O3 and HfO2 for PV passivation application.

290

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