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Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability
Type:
Journal
Info:
ECS J. Solid State Sci. Technol. 2018 volume 7, issue 2, N1-N6
Date:
2017-12-18
Author Information
| Name | Institution |
|---|---|
| M. N. Bhuyian | New Jersey Institute of Technology |
| P. Shao | New Jersey Institute of Technology |
| A. Sengupta | Heritage Institute of Technology |
| Y. Ding | New Jersey Institute of Technology |
| D. Misra | New Jersey Institute of Technology |
| K. Tapily | Tokyo Electron America, Inc. |
| R. D. Clark | Tokyo Electron America, Inc. |
| Steven Consiglio | Tokyo Electron America, Inc. |
| C. S. Wajda | Tokyo Electron America, Inc. |
| G. J. Leusink | Tokyo Electron America, Inc. |
Films
Film/Plasma Properties
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Al2O3 |
Notes
| 1124 |