Publication Information

Title: Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides

Type: Journal

Info: 2015 Appl. Phys. Express 8 084101

Date: 2015-06-30

DOI: http://dx.doi.org/10.7567/APEX.8.084101

Author Information

Name

Institution

National Taiwan University

National Dong Hwa University

National Dong Hwa University

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan University

Films

Plasma Al2O3 using Unknown

Deposition Temperature Range N/A

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

547

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