Publication Information

Title: High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition

Type: Conference Proceedings

Info: 2015 SID Symposium Digest of Technical Papers, Paper No S12.2

Date: 2015-09-21

DOI: http://dx.doi.org/10.1002/sdtp.10529

Author Information

Name

Institution

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Korea Advanced Institute of Science and Technology

Films

Plasma In2O3 using Unknown

Deposition Temperature Range = 150-250C

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Substrates

SiO2

Keywords

Notes

484

Disclaimer

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