Publication Information

Title: Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density

Type: Journal

Info: IEEE ELECTRON DEVICE LETTERS, VOL. 36, NO. 12, PP. 1277-1280, 2015

Date: 2015-10-01

DOI: http://dx.doi.org/10.1109/LED.2015.2486771

Author Information

Name

Institution

National Chiao Tung University

National Chiao Tung University

National Chiao Tung University

University of California - Berkeley

National Chiao Tung University

National Chiao Tung University

Films

Plasma AlN using Unknown

Deposition Temperature = 250C

75-24-1

7664-41-7

Thermal HfO2 using Unknown

Deposition Temperature Range N/A

352535-01-4

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Capacitance

C-V, Capacitance-Voltage Measurements

Unknown

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Unknown

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Unknown

Images

TEM, Transmission Electron Microscope

Unknown

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Substrates

InGaAs

Keywords

Notes

515

Disclaimer

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