Publication Information

Title: Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex

Type: Journal

Info: Applied Surface Science 362 (2016) 176 - 181

Date: 2015-11-09

DOI: http://dx.doi.org/10.1016/j.apsusc.2015.11.095

Author Information

Name

Institution

Hanyang University

Korea Research Institute of Chemical Technology

Korea Research Institute of Chemical Technology

Korea Research Institute of Chemical Technology

Korea Research Institute of Chemical Technology

Korea Research Institute of Chemical Technology

Korea Research Institute of Chemical Technology

Korea Research Institute of Chemical Technology

Korea Research Institute of Chemical Technology

Films

Plasma TaNx using Unknown

Deposition Temperature Range = 150-250C

0-0-0

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Unknown

Unknown

Density

Unknown

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Unknown

Unknown

Resistivity, Sheet Resistance

Unknown

Unknown

Substrates

Silicon

Keywords

Diffusion Barrier

Notes

477

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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