Publication Information

Title: Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

Type: Journal

Info: Adv. Mater. 2015 27(25) 3811--3816

Date: 2015-04-10

DOI: http://dx.doi.org/10.1002/adma.201501167

Author Information

Name

Institution

Seoul National University

Hewlett-Packard

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Films

Plasma Ta2O5 using Unknown

Deposition Temperature = 200C

852212-55-6

7732-18-5

Thermal HfO2 using Unknown

Deposition Temperature Range N/A

352535-01-4

10028-15-6

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Gaertner L116D

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

Perkin Elmer 660

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Thermo VG Sigma Probe

Images

TEM, Transmission Electron Microscope

FEI Technai F20

Substrates

Ti

HfO2

Keywords

Notes

356

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