Publication Information

Title: Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics

Type: Journal

Info: Japanese Journal of Applied Physics 55, 05FH01 (2016)

Date: 2015-10-14

DOI: http://doi.org/10.7567/JJAP.55.05FH01

Author Information

Name

Institution

Xidian University

Xidian University

Xidian University

Xidian University

Xidian University

Xidian University

Films

Plasma AlN using Unknown

Deposition Temperature = 300C

75-24-1

7664-41-7

Thermal Al2O3 using Unknown

Deposition Temperature = 300C

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Capacitance

C-V, Capacitance-Voltage Measurements

Unknown

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Unknown

Flat Band Voltage Shift

C-V, Capacitance-Voltage Measurements

Unknown

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Unknown

Fixed Charge

C-V, Capacitance-Voltage Measurements

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Substrates

GaN

Keywords

Notes

426

Disclaimer

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