Publication Information

Title: Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks

Type: Journal

Info: Applied Physics Letters 97, 152106 (2010)

Date: 2010-09-14

DOI: http://dx.doi.org/10.1063/1.3497014

Author Information

Name

Institution

Eindhoven University of Technology

Forschungszentrum J├╝lich

Eindhoven University of Technology

Eindhoven University of Technology

Films

Plasma Al2O3 using Unknown

Deposition Temperature = 200C

0-0-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Compositional Depth Profiling

SIMS, Secondary Ion Mass Spectrometry

Unknown

Thermal Stability

Thermal Effusion

Unknown

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

Surface Recombination Velocity

Photoconductance

Sinton WCT-100

Substrates

SiO2

Keywords

Passivation

Solar

Notes

Paper available as chapter 6 in on-line thesis.

685

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