Publication Information

Title: Schottky Barrier Height Reduction at Interface Between GZO Transparent Electrode and InP/InGaAs Structure by Zinc Driven-in Step and Nickel Oxide Insertion

Type: Journal

Info: IEEE Electron Device Letters (Volume:35, Issue: 12)

Date: 2014-10-14

DOI: http://dx.doi.org/10.1109/LED.2014.2360926

Author Information

Name

Institution

National Tsing Hua University

Films

Plasma Ga:ZnO using Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

TCO, Transparent Conducting Oxide

Doping

Notes

PEALD Ga-doped ZnO as TCO electrode.

283

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