Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 12(2) G5-G8 (2009)
Date:
2008-11-14

Author Information

Name Institution
Ji-Hoon AhnKorea Advanced Institute of Science and Technology
Ja-Yong KimHynix Semiconductor
Jin-Hyock KimHynix Semiconductor
Jae-Sung RohHynix Semiconductor
Sang-Won KangKorea Advanced Institute of Science and Technology

Films


Thermal RuO2


Plasma SrO


Film/Plasma Properties

Characteristic: Thermal Stability
Analysis: Anneal

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Ru
SiO2

Notes

800C O2 anneal of RuO2 etched the film.
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