Publication Information

Title: High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD

Type: Conference Proceedings

Info: CS MANTECH Conference, April 23rd - 26th, 2012, Boston, Massachusetts, USA

Date: 2012-04-23

DOI: http://gaasmantech.com/Digests/2012/papers/8b.1.056.pdf

Author Information

Name

Institution

University of Alberta

University of Alberta

University of Alberta

University of Alberta

University of Alberta

University of Alberta

Films

Plasma ZrO2 using Unknown

Deposition Temperature = 100C

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Thickness

TEM, Transmission Electron Microscope

Unknown

Capacitance

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Hysteresis

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Mobility

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Leakage Current

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Substrates

GaN

Keywords

Notes

648

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