Bipolar resistive switching in amorphous titanium oxide thin film

Type:
Journal
Info:
physica status solidi (RRL) - Rapid Research Letters Volume 4, Issue 1-2, pages 28--30, 2010
Date:
2009-11-23

Author Information

Name Institution
Hu Young JeongKorea Advanced Institute of Science and Technology
Jeong Yong LeeKorea Advanced Institute of Science and Technology
Min-Ki RyuElectronics and Telecommunication Research Institute, (ETRI)
Sung-Yool ChoiElectronics and Telecommunication Research Institute, (ETRI)

Films

Plasma TiO2


Film/Plasma Properties

Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Substrates

Al

Notes

Available on archive.org at https://arxiv.org/pdf/0908.3525.pdf
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