Publication Information

Title: Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD

Type: Journal

Info: Journal of Crystal Growth 322 (2011) 33 - 37

Date: 2011-03-01

DOI: http://dx.doi.org/10.1016/j.jcrysgro.2011.03.004

Author Information

Name

Institution

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Films

Plasma SnO2 using Unknown

Deposition Temperature = 300C

1067-33-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Gaertner L2W15S830

Thickness

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MPD X-ray Diffractometer

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Kratos Axis

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

MAC Scientific Co., M18XHF

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

X-ray Pole Figure

PANalytical Xpert PRO MPD X-ray Diffractometer

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

JEOL JEM-3000F

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

FEI Technai F20

Substrates

Sapphire

Keywords

Epitaxy

Notes

696

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