Publication Information

Title: Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena

Type: Journal

Info: 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

Date: 2015-11-02

DOI: http://dx.doi.org/10.1109/WiPDA.2015.7369305

Author Information

Name

Institution

University of Padova

University of Padova

University of Padova

University of Padova

University of Padova

University of Padova

Films

Plasma SiNx using Unknown

Deposition Temperature Range N/A

Thermal Al2O3 using Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

479

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

Follow plasma-ald.com

Follow @PlasmaALDGuy Tweet

Shortcuts



© 2014-2017 plasma-ald.com