Publication Information

Title: Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization

Type: Journal

Info: 2013 Jpn. J. Appl. Phys. 52 10MC07

Date: 2013-10-21

DOI: http://dx.doi.org/10.7567/JJAP.52.10MC07

Author Information

Name

Institution

Kwangwoon University

Kwangwoon University

Kwangwoon University

Korea Institute of Science and Technology

Films

Plasma WN using Unknown

Deposition Temperature Range N/A

7783-82-6

7664-41-7

Other WN using Unknown

Deposition Temperature Range N/A

7783-82-6

7664-41-7

Thermal WN using Unknown

Deposition Temperature Range N/A

7783-82-6

7664-41-7

19287-45-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Unknown

Unknown

Conformality, Step Coverage

Unknown

Unknown

Chemical Composition, Impurities

Unknown

Unknown

Substrates

Keywords

Diffusion Barrier

Interconnect

Notes

Abstract does not make it clear what exactly is the process. Good results with B2H6 treatment but no mention of a N-containing precursor or co-reactant.

310

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