Publication Information

Title: Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs

Type: Journal

Info: IEEE ELECTRON DEVICE LETTERS, VOL. 36, NO. 3, PP. 235-237, 2015

Date: 2015-01-07

DOI: http://dx.doi.org/10.1109/LED.2015.2394455

Author Information

Name

Institution

Chalmers University of Technology

III-V Lab

III-V Lab

Chalmers University of Technology

III-V Lab

Chalmers University of Technology

III-V Lab

III-V Lab

Chalmers University of Technology

Films

Thermal Al2O3 using Unknown

Deposition Temperature = 300C

75-24-1

7732-18-5

Plasma Al2O3 using Unknown

Deposition Temperature = 300C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Unknown

Unknown

Refractive Index

Unknown

Unknown

Substrates

Keywords

Passivation

Notes

468

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