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Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
Type:
Journal
Info:
J. Vac. Sci. Technol. A 32(1), Jan/Feb 2014, 01A127
Date:
2013-12-04
Author Information
| Name | Institution |
|---|---|
| Wenyan Wan | Chinese Academy of Sciences |
| Xinhong Cheng | Chinese Academy of Sciences |
| Duo Cao | Chinese Academy of Sciences |
| Li Zheng | Chinese Academy of Sciences |
| Dawei Xu | Chinese Academy of Sciences |
| Zhongjian Wang | Chinese Academy of Sciences |
| Chao Xia | Chinese Academy of Sciences |
| Lingyan Shen | Chinese Academy of Sciences |
| Yuehui Yu | Chinese Academy of Sciences |
| DaShen Shen | University of Alabama in Huntsville |
Films
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| p-type SOI(100) |
Notes
| Substrates pirahna and HF cleaned |
| Post metalization anneal |
| Rapid thermal anneal |
| 6 |