Publication Information

Title: Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V

Type: Journal

Info: IEEE ELECTRON DEVICE LETTERS, VOL. 37, NO. 2, PP. 212-215, 2016

Date: 2015-12-24

DOI: http://dx.doi.org/10.1109/LED.2015.2512279

Author Information

Name

Institution

National Institute of Information and Communications Technology

National Institute of Information and Communications Technology

National Institute of Information and Communications Technology

National Institute of Information and Communications Technology

National Institute of Information and Communications Technology

Films

Plasma Al2O3 using Unknown

Deposition Temperature = 250C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Ga2O3

Keywords

Notes

558

Disclaimer

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