Publication Information

Title: Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si

Type: Journal

Info: Journal of Vacuum Science & Technology B 33, 01A101 (2015)

Date: 2014-08-18

DOI: http://dx.doi.org/10.1116/1.4895010

Author Information

Name

Institution

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

University of Alabama in Huntsville

Films

Plasma HfO2 using Unknown

Deposition Temperature = 150C

352535-01-4

7782-44-7

Plasma Al2O3 using Unknown

Deposition Temperature = 150C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Images

TEM, Transmission Electron Microscope

Philips CM200-FEG

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

Synchrotron

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Kratos Analytical Axis Ultra DLD

Conduction Band Offset

XPS, X-ray Photoelectron Spectroscopy

Kratos Analytical Axis Ultra DLD

Leakage Current

I-V, Current-Voltage Measurements

Agilent B1505A Semiconductor Device Analyzer

Breakdown Voltage

I-V, Current-Voltage Measurements

Agilent B1505A Semiconductor Device Analyzer

Capacitance

C-V, Capacitance-Voltage Measurements

Agilent B1505A Semiconductor Device Analyzer

Flat Band Voltage Shift

C-V, Capacitance-Voltage Measurements

Agilent B1505A Semiconductor Device Analyzer

Hysteresis

C-V, Capacitance-Voltage Measurements

Agilent B1505A Semiconductor Device Analyzer

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Agilent B1505A Semiconductor Device Analyzer

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Agilent B1505A Semiconductor Device Analyzer

Substrates

Si(100)

Keywords

Nanolaminate

Notes

353

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