| 1 | Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma |
| 2 | Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method |
| 3 | Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal |
| 4 | Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition |
| 5 | Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density |
| 6 | Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks |
| 7 | Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC |
| 8 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
| 9 | Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition |
| 10 | Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics |
| 11 | Silicon surface passivation with atomic layer deposited aluminum nitride |
| 12 | Low-thermal budget flash light annealing for Al2O3 surface passivation |
| 13 | Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor |
| 14 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
| 15 | Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate |
| 16 | The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation |
| 17 | Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks |
| 18 | Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices |
| 19 | High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning |
| 20 | High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD |
| 21 | Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique |
| 22 | Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films |
| 23 | Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD |
| 24 | ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition |
| 25 | Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density |
| 26 | Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors |
| 27 | Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications |
| 28 | Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas |
| 29 | Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties |
| 30 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
| 31 | Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors |
| 32 | HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer |
| 33 | Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches |
| 34 | Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN |
| 35 | Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity |
| 36 | Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium |
| 37 | Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning |
| 38 | High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness |
| 39 | Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films |
| 40 | Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks |
| 41 | High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates |
| 42 | Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces |
| 43 | Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge |
| 44 | Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment |
| 45 | Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor |
| 46 | Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications |
| 47 | Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen |
| 48 | Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen |
| 49 | Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface |
| 50 | Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers |
| 51 | Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation |
| 52 | Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs |
| 53 | MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion |
| 54 | Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device |
| 55 | Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si |
| 56 | In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential |
| 57 | Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure |
| 58 | Very high frequency plasma reactant for atomic layer deposition |
| 59 | Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric |
| 60 | Improved understanding of recombination at the Si/Al2O3 interface |
| 61 | High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors |
| 62 | Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition |
| 63 | Nitride passivation of the interface between high-k dielectrics and SiGe |
| 64 | Evaluating the Impact of Thermal Annealing on Al2O3/c-Si Interface Properties by Non-Destructive Measurements |
| 65 | Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors |
| 66 | Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3 |
| 67 | Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD) |
| 68 | Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface |
| 69 | Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations |
| 70 | Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices |
| 71 | Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications |
| 72 | The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces |
| 73 | AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers |
| 74 | Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation |
| 75 | Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer |
| 76 | Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3 |
| 77 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
| 78 | Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition |
| 79 | Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition |
| 80 | Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures |
| 81 | Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods |
| 82 | Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells |
| 83 | An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices |
| 84 | Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors |
| 85 | Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure |
| 86 | Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation |
| 87 | A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs |
| 88 | Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions |
| 89 | Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment |
| 90 | Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor |
| 91 | Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics |
| 92 | Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing |
| 93 | Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement |
| 94 | Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs |
| 95 | Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer |
| 96 | Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact |
| 97 | Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties |
| 98 | Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film |
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