Interface Trap Density Plasma Enhanced Atomic Layer Deposition Publications

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NumberTitle
1Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
2A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
3Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
4Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
5Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
6Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
7Improved understanding of recombination at the Si/Al2O3 interface
8Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
9Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
10Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
11The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
12Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
13Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition
14Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
15Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
16Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
17High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
18Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
19Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
20Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
21High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
22Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
23Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
24Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
25Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
26Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
27Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
28Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
29Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
30Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
31Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
32Very high frequency plasma reactant for atomic layer deposition
33Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
34Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
35Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
36Low-thermal budget flash light annealing for Al2O3 surface passivation
37Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
38Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
39MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
40Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
41Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
42Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
43Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
44Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications
45Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
46A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
47Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
48Evaluating the Impact of Thermal Annealing on Al2O3/c-Si Interface Properties by Non-Destructive Measurements
49Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
50Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
51Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
52HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
53High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
54Nitride passivation of the interface between high-k dielectrics and SiGe
55Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors
56Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
57Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
58Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
59Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
60Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
61Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
62Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
63Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
64Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
65Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
66Silicon surface passivation with atomic layer deposited aluminum nitride
67High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
68Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
69Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
70Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
71In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
72Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
73Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation
74Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD
75An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
76In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
77Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
78High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
79Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
80Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
81Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
82Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
83ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition
84Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
85Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
86Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
87The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
88Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
89Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
90Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
91Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
92Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
93Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
94Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
95Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
96Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
97Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
98AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers