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Interface Trap Density Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Interface Trap Density returned 74 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
2A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
3Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
4AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
5Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
6An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
7Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
8Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
9Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
10Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
11Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
12Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
13Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
14Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
15Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
16Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition
17Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
18Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
19Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
20Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
21Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
22Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
23Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
24Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
25Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
26Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
27Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
28Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
29Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
30Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
31Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
32Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
33HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
34High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
35High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
36High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
37High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
38High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
39Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
40Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
41Improved understanding of recombination at the Si/Al2O3 interface
42Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
43Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
44Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
45In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
46Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
47Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
48Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
49Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
50Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
51Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
52Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
53Low-thermal budget flash light annealing for Al2O3 surface passivation
54Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
55Nitride passivation of the interface between high-k dielectrics and SiGe
56Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
57Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
58Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
59Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation
60Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
61Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
62Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
63Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
64Silicon surface passivation with atomic layer deposited aluminum nitride
65Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
66Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
67Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
68The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
69Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
70Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors
71Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
72Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
73Very high frequency plasma reactant for atomic layer deposition
74ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. If you know of publications I have missed or a database entry is wrong, send me an email at: marksowa@plasma-ald.com

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