1 | Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils |
2 | Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films |
3 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
4 | Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method |
5 | Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films |
6 | Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor |
7 | Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks |
8 | Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films |
9 | Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01) |
10 | Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics |
11 | Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition |
12 | Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments |
13 | Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD |
14 | Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition |
15 | Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors |
16 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
17 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
18 | Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films |
19 | The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD |
20 | Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide |
21 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
22 | Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors |
23 | Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases |
24 | Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer |
25 | The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition |
26 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
27 | Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2 |
28 | Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics |
29 | Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation |
30 | Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications |
31 | Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces |
32 | Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices |
33 | Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition |
34 | Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability |
35 | Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition |
36 | Characteristics of HfO2 thin films grown by plasma atomic layer deposition |
37 | The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces |
38 | Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma |
39 | Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films |
40 | Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition |
41 | HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer |
42 | In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential |
43 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
44 | Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack |
45 | Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods |
46 | Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications |
47 | Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition |
48 | Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics |
49 | Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC |
50 | Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition |
51 | Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
52 | Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods |
53 | Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films |
54 | Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation |
55 | Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas |
56 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
57 | Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity |
58 | Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement |
59 | Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate |
60 | Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment |
61 | Passivation effects of atomic-layer-deposited aluminum oxide |
62 | Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition |
63 | Trapped charge densities in Al2O3-based silicon surface passivation layers |
64 | Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices |
65 | Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact |
66 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
67 | On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes |
68 | Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches |
69 | Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films |
70 | Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition |
71 | A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs |
72 | Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process |
73 | Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices |
74 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
75 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
76 | Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures |
77 | MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion |
78 | Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films |
79 | The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation |
80 | Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors |
81 | A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition |