Flat Band Voltage Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Flat Band Voltage returned 53 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
2	A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
3	Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
4	Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
5	Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
6	Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
7	Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
8	Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
9	Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
10	Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
11	Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
12	Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
13	Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
14	Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
15	Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
16	Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition
17	Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
18	Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
19	Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
20	Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
21	Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
22	Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
23	Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
24	Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
25	HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
26	Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
27	Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
28	Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
29	In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
30	Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
31	Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
32	Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
33	Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
34	On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
35	Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
36	Passivation effects of atomic-layer-deposited aluminum oxide
37	Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
38	Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
39	Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
40	Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
41	Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
42	Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
43	Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability
44	Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
45	Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01)
46	Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
47	Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
48	The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
49	The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
50	Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
51	Trapped charge densities in Al2O3-based silicon surface passivation layers
52	Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
53	Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices

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