Flat Band Voltage Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Flat Band Voltage returned 83 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
2Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
3Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
4Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
5Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
6Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
7Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
8ALD and PEALD deposition of HfO2 and its effects on the nature of oxygen vacancies
9Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
10Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
11Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
12Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
13Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01)
14Plasma-Enhanced Atomic Layer Deposition of Zirconium Oxide Thin Films and Its Application to Solid Oxide Fuel Cells
15Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition
16Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
17Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
18The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
19Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
20Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
21Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
22Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
23Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
24The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
25Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
26Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
27A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
28Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
29Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
30Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
31A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
32A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
33Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
34Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
35Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
36Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
37Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
38Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
39MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
40The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
41Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
42HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
43Characteristics of HfO2 thin films grown by plasma atomic layer deposition
44Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
45Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
46Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
47Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
48Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
49Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
50Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
51Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
52Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
53Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
54Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
55Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
56Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
57Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
58On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
59Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
60Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
61Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
62Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
63In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
64Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
65Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
66Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
67Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
68Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
69Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
70Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
71Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition
72Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
73Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
74Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
75Passivation effects of atomic-layer-deposited aluminum oxide
76Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
77Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
78Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
79The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
80Trapped charge densities in Al2O3-based silicon surface passivation layers
81Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability
82Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
83In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential