Flat Band Voltage Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Flat Band Voltage returned 77 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
2A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
3A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
4Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
5Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
6Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
7Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
8Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
9Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
10Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
11Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
12Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
13Characteristics of HfO2 thin films grown by plasma atomic layer deposition
14Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
15Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
16Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
17Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
18Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
19Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
20Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
21Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
22Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
23Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
24Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
25Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
26Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
27Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition
28Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
29Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
30Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
31Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
32Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
33Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
34Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
35Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
36Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
37Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
38Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
39Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
40Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
41HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
42Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
43Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
44Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
45In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
46In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
47Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
48Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
49Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
50Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
51Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
52MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
53Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
54On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
55Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
56Passivation effects of atomic-layer-deposited aluminum oxide
57Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
58Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
59Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
60Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
61Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
62Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
63Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
64Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability
65Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
66Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01)
67Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
68Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
69The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
70The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
71The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
72The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
73Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
74Trapped charge densities in Al2O3-based silicon surface passivation layers
75Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
76Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
77Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices