Chemical Binding Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Chemical Binding returned 66 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
2An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
3Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
4Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
5Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasma
6Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
7Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
8Band alignment of Al2O3 with (-201) β-Ga2O3
9Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
10Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
11Carbon content control of silicon oxycarbide film with methane containing plasma
12Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
13Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
14Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
15Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
16Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
17Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
18Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
19Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
20Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
21Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
22Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
23Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
24Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
25Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
26HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
27Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
28Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
29Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
30Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
31In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
32In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition
33Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
34Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
35Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
36Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
37Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
38Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
39Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
40Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
41Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
42Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
43Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
44PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
45Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
46Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
47Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries
48Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
49Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
50Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
51Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
52Plasma-enhanced atomic layer deposition of vanadium nitride
53Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
54Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
55Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
56Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
57SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
58Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
59Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
60Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice
61Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2
62Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization
63The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
64The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
65The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films