Chemical Binding Plasma Enhanced Atomic Layer Deposition Publications

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NumberTitle
1Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
2The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
3Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
4Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
5HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
6Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films
7Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
8Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice
9Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films
10Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
11Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
12Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition
13Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
14Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
15PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
16Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
17Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
18Carbon content control of silicon oxycarbide film with methane containing plasma
19Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
20Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
21The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
22Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
23Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
24Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
25Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
26Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
27Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
28Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
29Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
30Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature
31Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
32Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
33Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes
34Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
35Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
36Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition
37Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy
38Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
39Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
40In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition
41Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors
42Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
43An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
44Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors
45Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
46Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
47Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasma
48Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
49Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
50Plasma-enhanced atomic layer deposition of vanadium nitride
51Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
52Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
53Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
54Band alignment of Al2O3 with (-201) β-Ga2O3
55Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
56The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
57Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
58Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
59Low-temperature direct synthesis of high quality WS2 thin films by plasma-enhanced atomic layer deposition for energy related applications
60Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors
61Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor
62Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films
63Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
64Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
65Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries
66Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2
67SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
68Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
69Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
70Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
71Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
72Growth characteristics and film properties of plasma-enhanced and thermal atomic-layer-deposited magnesium oxide thin films prepared using bis(ethylcyclopentadienyl)magnesium precursor
73Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
74Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
75Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
76Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
77In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
78Low-energy high-flux ion bombardment-induced interfacial mixing during Al2O3 plasma-enhanced atomic layer deposition
79Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization
80A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
81Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
82Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
83Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
84Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application