Chemical Binding Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Chemical Binding returned 29 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
2Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
3Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
4Band alignment of Al2O3 with (-201) β-Ga2O3
5Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
6Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
7Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
8Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
9Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
10Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
11Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
12HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
13Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
14Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
15Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
16Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
17In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
18Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
19Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
20Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
21Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
22Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
23Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
24Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
25Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
26Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
27Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
28Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
29The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor

Mark Sowa

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