Chemical Binding Plasma Enhanced Atomic Layer Deposition Publications

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NumberTitle
1Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
2Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films
3Low-energy high-flux ion bombardment-induced interfacial mixing during Al2O3 plasma-enhanced atomic layer deposition
4Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
5The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
6Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
7Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
8Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
9Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2
10Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice
11Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition
12Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
13Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
14A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
15Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors
16The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
17Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
18In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
19Growth characteristics and film properties of plasma-enhanced and thermal atomic-layer-deposited magnesium oxide thin films prepared using bis(ethylcyclopentadienyl)magnesium precursor
20Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy
21HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
22Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
23Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
24Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
25Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
26Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes
27Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
28Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
29Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries
30Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
31Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors
32Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
33Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
34Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature
35PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
36Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
37Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
38In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition
39Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
40Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
41Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
42Band alignment of Al2O3 with (-201) β-Ga2O3
43Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
44Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
45Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
46SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
47Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films
48Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
49Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
50Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
51Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
52Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films
53Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
54Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor
55An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
56Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
57Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
58The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
59Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
60Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
61Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization
62Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
63Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
64Plasma-enhanced atomic layer deposition of vanadium nitride
65Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
66Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
67Carbon content control of silicon oxycarbide film with methane containing plasma
68Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
69Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
70Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasma
71Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
72Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition
73Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
74Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
75Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
76Low-temperature direct synthesis of high quality WS2 thin films by plasma-enhanced atomic layer deposition for energy related applications
77Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
78Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
79Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
80Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
81Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
82Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
83Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
84Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors