Chemical Binding Plasma Enhanced Atomic Layer Deposition Publications

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NumberTitle
1Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
2Carbon content control of silicon oxycarbide film with methane containing plasma
3Low-temperature direct synthesis of high quality WS2 thin films by plasma-enhanced atomic layer deposition for energy related applications
4Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
5Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
6Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
7Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
8Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors
9Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
10Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition
11Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
12Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
13Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
14Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice
15Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
16Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
17Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
18Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors
19Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
20Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
21Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
22Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
23Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
24Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature
25Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
26Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
27Low-energy high-flux ion bombardment-induced interfacial mixing during Al2O3 plasma-enhanced atomic layer deposition
28Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
29Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films
30An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
31PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
32Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
33A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
34Growth characteristics and film properties of plasma-enhanced and thermal atomic-layer-deposited magnesium oxide thin films prepared using bis(ethylcyclopentadienyl)magnesium precursor
35Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
36Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
37Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
38Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
39Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
40Band alignment of Al2O3 with (-201) β-Ga2O3
41Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
42Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors
43SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
44Plasma-enhanced atomic layer deposition of vanadium nitride
45The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
46Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries
47Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization
48Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition
49The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
50Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
51Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
52Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
53The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
54Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
55Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
56In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition
57Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
58HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
59Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes
60Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
61Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
62Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
63Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
64In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
65Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
66Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
67Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
68Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasma
69Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
70Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor
71Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
72Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy
73Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
74Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
75Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
76Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
77Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
78Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films
79Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
80Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
81Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
82Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
83Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2