Chemical Binding Plasma Enhanced Atomic Layer Deposition Publications

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NumberTitle
1Carbon content control of silicon oxycarbide film with methane containing plasma
2Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
3Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
4Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
5Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
6Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
7Growth characteristics and film properties of plasma-enhanced and thermal atomic-layer-deposited magnesium oxide thin films prepared using bis(ethylcyclopentadienyl)magnesium precursor
8Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
9Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films
10Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
11Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
12Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
13Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
14SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
15Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
16Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
17Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
18The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
19Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
20Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice
21Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
22Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors
23Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
24Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
25Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature
26Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
27Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
28Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
29Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
30Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
31Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
32Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
33In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition
34Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
35Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
36Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2
37Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
38Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasma
39Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
40Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
41Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
42Band alignment of Al2O3 with (-201) β-Ga2O3
43Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy
44Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
45Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
46In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
47Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
48Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition
49Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
50Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
51The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
52Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
53Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
54Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization
55Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
56PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
57Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
58Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
59Plasma-enhanced atomic layer deposition of vanadium nitride
60Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes
61Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films
62Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries
63A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
64Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
65HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
66Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
67Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
68Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
69Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
70Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
71Low-temperature direct synthesis of high quality WS2 thin films by plasma-enhanced atomic layer deposition for energy related applications
72Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition
73Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
74The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
75Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
76Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
77Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
78Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
79An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices