1 | Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films |
2 | Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition |
3 | Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films |
4 | Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition |
5 | Annealing behavior of ferroelectric Si-doped HfO2 thin films |
6 | Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests |
7 | Propagation Effects in Carbon Nanoelectronics |
8 | Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure |
9 | Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing |
10 | Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition |
11 | High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors |
12 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage |
13 | Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks |
14 | Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors |
15 | Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs |
16 | Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures |
17 | Plasma and Thermal ALD of Al2O3 in a Commercial 200mm ALD Reactor |
18 | Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition |
19 | Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition |
20 | Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method |
21 | The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films |
22 | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks |
23 | Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition |
24 | Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films |
25 | Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage |
26 | Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition |
27 | Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils |
28 | Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer |
29 | Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure |
30 | Low temperature growth of Beryllium Oxide thin films prepared via plasma enhanced atomic layer deposition |
31 | Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces |
32 | Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator |
33 | Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications |
34 | Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage |
35 | The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer |
36 | Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures |
37 | Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal |
38 | Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition |
39 | Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN |
40 | Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources |
41 | A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology |
42 | High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical |
43 | Innovative remote plasma source for atomic layer deposition for GaN devices |
44 | Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications |
45 | ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium |
46 | Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods |
47 | Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition |
48 | Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices |
49 | AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition |
50 | Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si |
51 | Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition |
52 | Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric |
53 | Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition |
54 | Plasma enhanced atomic layer deposited silicon dioxide with divalent Si precursor [N,N'-tert-butyl-1,1-dimethylethylenediamine silylene] |
55 | Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor |
56 | Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications |
57 | Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC |
58 | Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
59 | Fast PEALD ZnO Thin-Film Transistor Circuits |
60 | Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements |
61 | A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition |
62 | Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC |
63 | A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application |
64 | Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions |
65 | Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01) |
66 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
67 | Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric |
68 | Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors |
69 | PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen |
70 | ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method |
71 | Characteristics of TiO2 Films Prepared by ALD With and Without Plasma |
72 | Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2 |
73 | Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors |
74 | Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties |
75 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
76 | Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing |
77 | Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric |
78 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
79 | Plasma-Enhanced Atomic Layer Deposition of Zirconium Oxide Thin Films and Its Application to Solid Oxide Fuel Cells |
80 | Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition |
81 | Densification of Thin Aluminum Oxide Films by Thermal Treatments |
82 | Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si |
83 | Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma |