Breakdown Voltage Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Breakdown Voltage returned 78 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
2A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
3A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
4Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
5Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
6AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
7Annealing behavior of ferroelectric Si-doped HfO2 thin films
8Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
9Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
10Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition
11Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
12Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
13Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
14Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
15Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
16Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
17Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
18Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
19Densification of Thin Aluminum Oxide Films by Thermal Treatments
20Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
21Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
22Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
23Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
24Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
25Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
26Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
27Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
28Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
29Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
30Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
31Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
32Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
33Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
34Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
35Fast PEALD ZnO Thin-Film Transistor Circuits
36Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
37High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
38High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
39Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
40Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
41Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN
42Innovative remote plasma source for atomic layer deposition for GaN devices
43Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
44Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
45Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
46Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
47Low temperature growth of Beryllium Oxide thin films prepared via plasma enhanced atomic layer deposition
48Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
49Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
50Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
51Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
52Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
53Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
54Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
55Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
56Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
57Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
58PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
59Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
60Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
61Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors
62Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
63Propagation Effects in Carbon Nanoelectronics
64Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
65Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
66Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
67Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
68Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01)
69Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
70Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
71Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
72The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
73The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
74Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
75Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
76Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
77ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
78ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium