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Breakdown Voltage Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Breakdown Voltage returned 83 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
2Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
3Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
4The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
5Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
6Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
7Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
8Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
9Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer
10Plasma and Thermal ALD of Al2O3 in a Commercial 200mm ALD Reactor
11Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
12The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
13Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
14Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
15Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
16Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors
17Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
18A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
19AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
20Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
21ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium
22High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
23Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
24Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
25Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
26Annealing behavior of ferroelectric Si-doped HfO2 thin films
27Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition
28Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
29Innovative remote plasma source for atomic layer deposition for GaN devices
30Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
31Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
32Plasma-Enhanced Atomic Layer Deposition of Zirconium Oxide Thin Films and Its Application to Solid Oxide Fuel Cells
33Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
34Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN
35Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
36Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
37Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
38Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
39Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
40Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
41Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
42Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
43Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
44Low temperature growth of Beryllium Oxide thin films prepared via plasma enhanced atomic layer deposition
45A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
46Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01)
47Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
48Plasma enhanced atomic layer deposited silicon dioxide with divalent Si precursor [N,N'-tert-butyl-1,1-dimethylethylenediamine silylene]
49Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
50Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
51Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
52Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
53ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
54High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
55Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
56Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
57Fast PEALD ZnO Thin-Film Transistor Circuits
58Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
59Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
60Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
61Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
62Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
63Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
64Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
65Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
66A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
67Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
68Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
69Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
70Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
71Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
72Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
73Densification of Thin Aluminum Oxide Films by Thermal Treatments
74Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
75Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
76Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
77Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
78Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
79Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
80Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
81Propagation Effects in Carbon Nanoelectronics
82Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
83Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2