Breakdown Voltage Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Breakdown Voltage returned 73 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
2A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
3A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
4Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
5Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
6AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
7Annealing behavior of ferroelectric Si-doped HfO2 thin films
8Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
9Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
10Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition
11Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
12Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
13Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
14Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
15Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
16Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
17Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
18Densification of Thin Aluminum Oxide Films by Thermal Treatments
19Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
20Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
21Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
22Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
23Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
24Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
25Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
26Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
27Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
28Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
29Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
30Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
31Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
32Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
33Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
34Fast PEALD ZnO Thin-Film Transistor Circuits
35Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
36High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
37High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
38Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
39Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
40Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN
41Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
42Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
43Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
44Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
45Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
46Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
47Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
48Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
49Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
50Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
51Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
52Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
53Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
54PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
55Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
56Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
57Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
58Propagation Effects in Carbon Nanoelectronics
59Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
60Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
61Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
62Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
63Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01)
64Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
65Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
66Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
67The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
68The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
69Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
70Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
71Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
72ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
73ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium