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Breakdown Voltage Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Breakdown Voltage returned 83 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
2A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
3Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
4Densification of Thin Aluminum Oxide Films by Thermal Treatments
5High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
6Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
7Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors
8Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
9Fast PEALD ZnO Thin-Film Transistor Circuits
10Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
11Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
12AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
13Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
14Low temperature growth of Beryllium Oxide thin films prepared via plasma enhanced atomic layer deposition
15Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
16Innovative remote plasma source for atomic layer deposition for GaN devices
17Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer
18Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
19Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
20Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
21High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
22A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
23Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
24Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
25Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
26Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
27Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
28Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
29Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
30Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
31Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
32Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
33Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01)
34PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
35Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
36A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
37Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
38Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
39Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
40Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
41The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
42Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
43Propagation Effects in Carbon Nanoelectronics
44Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
45Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
46Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
47Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
48Plasma enhanced atomic layer deposited silicon dioxide with divalent Si precursor [N,N'-tert-butyl-1,1-dimethylethylenediamine silylene]
49Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
50Plasma and Thermal ALD of Al2O3 in a Commercial 200mm ALD Reactor
51Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
52Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
53Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
54Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
55Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
56Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
57Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
58Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
59Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
60Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
61Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
62The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
63Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
64ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
65Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
66Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
67Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
68Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
69Plasma-Enhanced Atomic Layer Deposition of Zirconium Oxide Thin Films and Its Application to Solid Oxide Fuel Cells
70Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
71Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
72Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
73Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
74Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
75Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
76Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN
77Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
78Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
79Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
80Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
81Annealing behavior of ferroelectric Si-doped HfO2 thin films
82Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition
83ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium