Breakdown Voltage Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Breakdown Voltage returned 66 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
2Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
3Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
4AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
5Annealing behavior of ferroelectric Si-doped HfO2 thin films
6Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
7Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
8Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
9Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
10Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
11Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
12Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
13Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
14Densification of Thin Aluminum Oxide Films by Thermal Treatments
15Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
16Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
17Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
18Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
19Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
20Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
21Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
22Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
23Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
24Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
25Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
26Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
27Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
28Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
29Fast PEALD ZnO Thin-Film Transistor Circuits
30Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
31High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
32High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
33Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
34Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
35Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN
36Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
37Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
38Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
39Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
40Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
41Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
42Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
43Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
44Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
45Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
46Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
47Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
48PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
49Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
50Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
51Propagation Effects in Carbon Nanoelectronics
52Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
53Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
54Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
55Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
56Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01)
57Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
58Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
59Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
60The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
61The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
62Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
63Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
64Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
65ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
66ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium


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