Breakdown Voltage Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Breakdown Voltage returned 68 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
2A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
3A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
4Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
5Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
6AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
7Annealing behavior of ferroelectric Si-doped HfO2 thin films
8Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
9Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
10Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
11Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
12Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
13Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
14Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
15Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
16Densification of Thin Aluminum Oxide Films by Thermal Treatments
17Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
18Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
19Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
20Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
21Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
22Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
23Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
24Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
25Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
26Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
27Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
28Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
29Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
30Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
31Fast PEALD ZnO Thin-Film Transistor Circuits
32Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
33High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
34High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
35Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
36Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
37Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN
38Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
39Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
40Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
41Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
42Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
43Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
44Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
45Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
46Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
47Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
48Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
49Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
50PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
51Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
52Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
53Propagation Effects in Carbon Nanoelectronics
54Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
55Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
56Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
57Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
58Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01)
59Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
60Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
61Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
62The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
63The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
64Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
65Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
66Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
67ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
68ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium


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