1 | Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
2 | Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors |
3 | Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4 |
4 | Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films |
5 | Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer |
6 | On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes |
7 | Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability |
8 | Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric |
9 | TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition |
10 | Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation |
11 | Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing |
12 | Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments |
13 | Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties |
14 | Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas |
15 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
16 | Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics |
17 | Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition |
18 | Properties of HfAlO film deposited by plasma enhanced atomic layer deposition |
19 | Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor |
20 | Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V |
21 | Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition |
22 | MANOS performance dependence on ALD Al2O3 oxidation source |
23 | Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4 |
24 | Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation |
25 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
26 | Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma |
27 | Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers |
28 | Characteristics of HfO2 thin films grown by plasma atomic layer deposition |
29 | The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films |
30 | Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD |
31 | Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge |
32 | Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide |
33 | Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O |
34 | Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices |
35 | Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate |
36 | Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition |
37 | Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer |
38 | Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks |
39 | Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method |
40 | Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films |
41 | Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates |
42 | Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures |
43 | Plasma-enhanced atomic layer deposition of BaTiO3 |
44 | High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning |
45 | Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition |
46 | Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films |
47 | Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition |
48 | Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods |
49 | Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations |
50 | Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants |
51 | Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium |
52 | Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer |
53 | Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma |
54 | Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films |
55 | Plasma and Thermal ALD of Al2O3 in a Commercial 200mm ALD Reactor |
56 | Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes |
57 | Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate |
58 | Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode |
59 | Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium |
60 | Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics |
61 | Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors |
62 | A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology |
63 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
64 | Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors |
65 | Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
66 | Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor |
67 | Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon |
68 | Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode |
69 | Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods |
70 | Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks |
71 | Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density |
72 | Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface |
73 | Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films |
74 | Nitride passivation of the interface between high-k dielectrics and SiGe |
75 | Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors |
76 | Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications |
77 | Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O |