EOT, Equivalent Oxide Thickness Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing EOT, Equivalent Oxide Thickness returned 72 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
2Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
3Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
4Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
5Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
6Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
7Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
8Characteristics of HfO2 thin films grown by plasma atomic layer deposition
9Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
10Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
11Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
12Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
13Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
14Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
15Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
16Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
17Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
18Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
19Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
20Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
21Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
22Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
23Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
24Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
25Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
26Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
27Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
28Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications
29Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
30Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition
31Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
32Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
33High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
34Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
35Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
36Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
37Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes
38Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
39Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
40Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
41Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
42Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
43Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
44Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
45Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
46Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
47Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
48Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium
49MANOS performance dependence on ALD Al2O3 oxidation source
50Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
51Nitride passivation of the interface between high-k dielectrics and SiGe
52On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
53Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4
54Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
55Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
56Plasma-enhanced atomic layer deposition of BaTiO3
57Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
58Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
59Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
60Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability
61Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
62Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
63Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
64Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
65Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
66Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
67Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
68The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
69Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
70Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
71TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
72Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors


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