Interfacial Layer Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Interfacial Layer returned 49 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
2A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
3Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
4Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
5Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
6Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
7Characteristics of HfO2 thin films grown by plasma atomic layer deposition
8Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
9Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
10Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
11Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
12Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
13Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
14Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
15Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
16Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
17Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
18Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
19Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
20Formation of aluminum nitride thin films as gate dielectrics on Si(100)
21Hafnia and alumina on sulphur passivated germanium
22High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
23Improved understanding of recombination at the Si/Al2O3 interface
24Improvement on the Passivation Effect of Al2O3 Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells
25Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
26In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
27Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
28Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
29Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
30Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
31Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
32Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
33Oxygen migration in TiO2-based higher-k gate stacks
34Passivation effects of atomic-layer-deposited aluminum oxide
35PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
36PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
37PEALD ZrO2 Films Deposition on TiN and Si Substrates
38PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
39Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
40Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
41Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
42Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
43Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals
44Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
45Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
46Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
47Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
48Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
49ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method


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