Interfacial Layer Plasma Enhanced Atomic Layer Deposition Publications

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NumberTitle
1Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
2Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
3Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors
4Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals
5Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
6Characteristics of HfO2 thin films grown by plasma atomic layer deposition
7Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
8Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
9Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
10Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
11A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
12PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
13Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
14Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
15Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
16Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
17Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
18Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition
19Improvement on the Passivation Effect of Al2O3 Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells
20Atomic layer deposition of YMnO3 thin films
21Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
22Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
23Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
24Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
25Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
26PEALD ZrO2 Films Deposition on TiN and Si Substrates
27Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
28Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
29Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
30Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
31PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
32Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
33Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
34Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
35Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice
36Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
37Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
38In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
39Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
40Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
41Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
42Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
43Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
44Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
45Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
46The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
47Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
48Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
49Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
50A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
51Improved understanding of recombination at the Si/Al2O3 interface
52Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
53PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
54Plasma-enhanced atomic layer deposition of Co on metal surfaces
55Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
56Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
57Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
58Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
59Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
60High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
61Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
62Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
63Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
64Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
65Passivation effects of atomic-layer-deposited aluminum oxide
66Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
67Oxygen migration in TiO2-based higher-k gate stacks
68Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
69ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
70Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
71Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
72Formation of aluminum nitride thin films as gate dielectrics on Si(100)
73Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
74Evaluating the Impact of Thermal Annealing on Al2O3/c-Si Interface Properties by Non-Destructive Measurements
75Hafnia and alumina on sulphur passivated germanium