Interfacial Layer Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Interfacial Layer returned 74 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
2PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
3The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
4In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
5Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
6Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
7Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
8Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
9Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
10Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
11Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
12Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
13Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
14Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
15Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
16Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
17Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
18Hafnia and alumina on sulphur passivated germanium
19Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
20Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
21Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
22Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
23Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
24Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
25Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
26A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
27Improvement on the Passivation Effect of Al2O3 Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells
28Plasma-enhanced atomic layer deposition of Co on metal surfaces
29PEALD ZrO2 Films Deposition on TiN and Si Substrates
30Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice
31Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
32Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals
33Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
34Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
35Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
36Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
37Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
38Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
39Evaluating the Impact of Thermal Annealing on Al2O3/c-Si Interface Properties by Non-Destructive Measurements
40Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
41Atomic layer deposition of YMnO3 thin films
42Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
43Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
44Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
45Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
46High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
47Oxygen migration in TiO2-based higher-k gate stacks
48Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
49PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
50Characteristics of HfO2 thin films grown by plasma atomic layer deposition
51Passivation effects of atomic-layer-deposited aluminum oxide
52Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
53Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
54PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
55Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
56Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
57Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
58Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition
59Formation of aluminum nitride thin films as gate dielectrics on Si(100)
60Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
61Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors
62Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
63ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
64Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
65Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
66Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
67Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
68Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
69Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
70Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
71Improved understanding of recombination at the Si/Al2O3 interface
72Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
73Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
74A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect