| 1 | MANOS performance dependence on ALD Al2O3 oxidation source |
| 2 | Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications |
| 3 | High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD |
| 4 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide |
| 5 | AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers |
| 6 | Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces |
| 7 | Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics |
| 8 | MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion |
| 9 | Characteristics of HfO2 thin films grown by plasma atomic layer deposition |
| 10 | The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films |
| 11 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
| 12 | Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition |
| 13 | Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si |
| 14 | Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique |
| 15 | AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants |
| 16 | Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD) |
| 17 | Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors |
| 18 | Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors |
| 19 | Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics |
| 20 | Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors |
| 21 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
| 22 | Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices |
| 23 | A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment |
| 24 | Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs |
| 25 | Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN |
| 26 | Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique |
| 27 | The effects of plasma treatment on the thermal stability of HfO2 thin films |
| 28 | The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD |
| 29 | A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor |
| 30 | Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights |
| 31 | Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis |
| 32 | Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks |
| 33 | Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures |
| 34 | Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition |
| 35 | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks |
| 36 | Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition |
| 37 | Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma |
| 38 | Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3 |
| 39 | Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen |
| 40 | Capacitance characterization of GaP/n-Si structures grown by PE-ALD |
| 41 | Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure |
| 42 | Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods |
| 43 | Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates |
| 44 | Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor |
| 45 | Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers |
| 46 | Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures |
| 47 | Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface |
| 48 | Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method |
| 49 | Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications |
| 50 | AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD |
| 51 | Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods |
| 52 | Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor |
| 53 | Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time |
| 54 | Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer |
| 55 | Nitride passivation of the interface between high-k dielectrics and SiGe |
| 56 | In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors |
| 57 | Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device |
| 58 | Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor |
| 59 | High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness |
| 60 | Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition |
| 61 | Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer |
| 62 | High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning |
| 63 | Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films |
| 64 | Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties |
| 65 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
| 66 | Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition |
| 67 | Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment |
| 68 | Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition |
| 69 | Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs |
| 70 | High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition |
| 71 | Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage |
| 72 | Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 73 | Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge |
| 74 | Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors |
| 75 | Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O |
| 76 | Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping |
| 77 | Fast PEALD ZnO Thin-Film Transistor Circuits |
| 78 | Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition |
| 79 | Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation |
| 80 | Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition |
| 81 | In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential |
| 82 | Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate |
| 83 | Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage |
| 84 | Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD |
| 85 | Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films |
| 86 | Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition |
| 87 | ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors |
| 88 | Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 89 | Three dimensional ALD of TiO2 for in-vivo biomedical sensor applications |
| 90 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage |
| 91 | Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD |
| 92 | Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure |
| 93 | Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics |
| 94 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
| 95 | Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density |
| 96 | Sub-nanometer heating depth of atomic layer annealing |
| 97 | Influence of PE-ALD of GaP on the Silicon Wafers Quality |
| 98 | Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications |
| 99 | Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation |
| 100 | In-gap states in titanium dioxide and oxynitride atomic layer deposited films |
| 101 | Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films |
| 102 | Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System |
| 103 | ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors |
| 104 | A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs |
| 105 | Oxygen migration in TiO2-based higher-k gate stacks |
| 106 | Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films |
| 107 | ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition |
| 108 | Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition |
| 109 | AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing |
| 110 | ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method |
| 111 | Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices |
| 112 | Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 113 | Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study |
| 114 | Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer |
| 115 | Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure |
| 116 | Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density |
| 117 | Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors |
| 118 | Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition |
| 119 | Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas |
| 120 | Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films |
| 121 | Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition |
| 122 | Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films |
| 123 | Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition |
| 124 | Plasma-enhanced atomic layer deposition of ruthenium metal on free-standing carbon nanotube forest for 3D flexible binder-less supercapacitor electrodes |
| 125 | Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications |
| 126 | Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition |
| 127 | Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition |
| 128 | Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering |
| 129 | Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors |
| 130 | PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen |
| 131 | The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces |
| 132 | Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD |
| 133 | Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices |
| 134 | Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack |
| 135 | Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments |
| 136 | Experimental and theoretical determination of the role of ions in atomic layer annealing |
| 137 | Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications |
