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Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 49, No. 3, pp. 1243-1246
Date:
2005-11-24
DOI:
http://www.jkps.or.kr/journal/download_pdf.php?spage=1243&volume=49&number=3

Author Information

Name Institution
Eun-Joo LeeHanyang University
Myoung-Gyun KoHanyang University
Beom-Yong KimHanyang University
Sang-Kyun ParkHanyang University
Heon-Do KimHanyang University
Jong-Wan ParkHanyang University

Films

Plasma La2O3

Hardware used: Custom ECR
La(EtCp)3, tris(ethylcyclopentadienyl) lanthanum
CAS#: 404009-15-0
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature Range = 150-450C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 82 C-V

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 82 C-V

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 82 C-V

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4145B Semiconductor Parameter Analyzer

Substrates

Silicon

Notes

1312