Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
Type:
Journal
Info:
Applied Physics Letters 107, 183509 (2015)
Date:
2015-10-24
Author Information
| Name | Institution |
|---|---|
| Donghyi Koh | University of Texas at Austin |
| Seung Heon Shin | University of Texas at Austin |
| Jaehyun Ahn | University of Texas at Austin |
| Sushant Sonde | University of Texas at Austin |
| Hyuk-Min Kwon | Hynix Semiconductor |
| Tommaso Orzali | SEMATECH Inc. |
| Dae-Hyun Kim | Kyungpook National University |
| Tae-Woo Kim | SEMATECH Inc. |
| Sanjay K. Banerjee | University of Texas at Austin |
Films
Other Al2O3
Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
Other HfO2
Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
Other TiN
Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
Film/Plasma Properties
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Threshold Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Threshold Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| InGaAs |
Notes
| Prior to ALD of dielectrics, InGaAs substrate bombarded with 20W O2 plasma. |
| 402 |