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Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device

Type:
Journal
Info:
Applied Physics Letters 107, 183509 (2015)
Date:
2015-10-24
DOI:
http://dx.doi.org/10.1063/1.4935248

Author Information

Name Institution
Donghyi KohUniversity of Texas at Austin
Seung Heon ShinUniversity of Texas at Austin
Jaehyun AhnUniversity of Texas at Austin
Sushant SondeUniversity of Texas at Austin
Hyuk-Min KwonHynix Semiconductor
Tommaso OrzaliSEMATECH Inc.
Dae-Hyun KimKyungpook National University
Tae-Woo KimSEMATECH Inc.
Sanjay K. BanerjeeUniversity of Texas at Austin

Films

Other Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
Deposition Temperature Range N/A

Other HfO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
Deposition Temperature Range N/A

Other TiN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Threshold Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Threshold Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

InGaAs

Notes

Prior to ALD of dielectrics, InGaAs substrate bombarded with 20W O2 plasma.
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