| 1 | Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films |
| 2 | High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition |
| 3 | Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors |
| 4 | AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD |
| 5 | 600 V High-Performance AlGaN/GaN HEMTs with AlN/SiNx Passivation |
| 6 | Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization |
| 7 | Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer |
| 8 | ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition |
| 9 | All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process |
| 10 | Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor |
| 11 | A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance |
| 12 | 823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric |
| 13 | Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation |
| 14 | Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer |
| 15 | Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment |
| 16 | The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition |
| 17 | AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants |
| 18 | Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces |
| 19 | Top-down fabricated ZnO nanowire transistors for application in biosensors |
| 20 | Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors |
| 21 | Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 22 | Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer |
| 23 | Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs |
| 24 | Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources |
| 25 | Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition |
| 26 | Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator |
| 27 | Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition |
| 28 | Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant |
| 29 | Practical Challenges of Processing III-Nitride/Graphene/SiC Devices |
| 30 | Hysteresis behaviour of top-down fabricated ZnO nanowire transistors |
| 31 | Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate |
| 32 | Nitride passivation of the interface between high-k dielectrics and SiGe |
| 33 | Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods |
| 34 | Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters |
| 35 | Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer |
| 36 | High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge |
| 37 | Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors |
| 38 | Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors |
| 39 | Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation |
| 40 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
| 41 | Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current |
| 42 | Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer |
| 43 | ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs |
| 44 | Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET |
| 45 | Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique |
| 46 | Self-aligned ZnO thin-film transistors with 860 MHz fT and 2 GHz fmax for large-area applications |
| 47 | Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric |
| 48 | WS2 transistors on 300 mm wafers with BEOL compatibility |
| 49 | Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides |
| 50 | Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs |
| 51 | Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal |
| 52 | Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors |
| 53 | AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition |
| 54 | Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing |
| 55 | Combined PEALD Gate-Dielectric and In-Situ SiN Cap-Layer for Reduced Vth Shift and RDS-ON Dispersion of AlGaN/GaN HEMTs on 200 mm Si Wafer |
| 56 | Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials |
| 57 | Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs |
| 58 | Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal |
| 59 | Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor |
| 60 | Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs |
| 61 | DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air |
| 62 | High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2 |
| 63 | Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration |
| 64 | Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation |
| 65 | Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights |
| 66 | Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors |
| 67 | Advances in the fabrication of graphene transistors on flexible substrates |
| 68 | Plasma-Enhanced Atomic Layer Deposition of p-Type Copper Oxide Semiconductors with Tunable Phase, Oxidation State, and Morphology |
| 69 | Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application |
| 70 | Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer |
