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Transistor Characteristics Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Transistor Characteristics returned 46 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

1Advances in the fabrication of graphene transistors on flexible substrates
2Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
3ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
4AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
5AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
6AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
7Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
8Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
9Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
10Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
11Combined PEALD Gate-Dielectric and In-Situ SiN Cap-Layer for Reduced Vth Shift and RDS-ON Dispersion of AlGaN/GaN HEMTs on 200 mm Si Wafer
12Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
13Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric
14Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
15Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation
16DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
17Demonstration of flexible thin film transistors with GaN channels
18Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
19Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
20Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
21Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
22Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
23High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
24High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
25Hysteresis behaviour of top-down fabricated ZnO nanowire transistors
26Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs
27Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
28Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
29Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
30Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
31Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
32Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
33Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
34Nitride passivation of the interface between high-k dielectrics and SiGe
35Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
36Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
37Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters
38Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
39Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
40Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
41Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
42Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
43The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition
44Top-down fabricated ZnO nanowire transistors for application in biosensors
45Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
46Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal

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