Transistor Characteristics Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Transistor Characteristics returned 74 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors
2Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
3Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
4Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
5A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
6Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
7AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
8Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
9Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
10Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer
11Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
12Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
13Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
14High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
15Self-aligned ZnO thin-film transistors with 860 MHz fT and 2 GHz fmax for large-area applications
16Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
17Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer
18Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
19ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition
20600 V High-Performance AlGaN/GaN HEMTs with AlN/SiNx Passivation
21AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
22Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
23Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
24Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
25DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
26Plasma-Enhanced Atomic Layer Deposition of HfO2 on Monolayer, Bilayer, and Trilayer MoS2 for the Integration of High-κ Dielectrics in Two-Dimensional Devices
27Plasma-Enhanced Atomic Layer Deposition of p-Type Copper Oxide Semiconductors with Tunable Phase, Oxidation State, and Morphology
28Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
29Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
30Top-down fabricated ZnO nanowire transistors for application in biosensors
31Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
32Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
33823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
34Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
35Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
36Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs
37Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
38High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
39All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process
40High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
41Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
42Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
43Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation
44Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
45Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
46Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters
47Combined PEALD Gate-Dielectric and In-Situ SiN Cap-Layer for Reduced Vth Shift and RDS-ON Dispersion of AlGaN/GaN HEMTs on 200 mm Si Wafer
48Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
49WS2 transistors on 300 mm wafers with BEOL compatibility
50The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition
51Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric
52Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
53Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
54Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
55Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
56Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
57Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films
58Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
59Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
60Advances in the fabrication of graphene transistors on flexible substrates
61Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
62ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
63Nitride passivation of the interface between high-k dielectrics and SiGe
64Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
65Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
66Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
67Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
68Hysteresis behaviour of top-down fabricated ZnO nanowire transistors
69Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
70AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
71Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor