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Transistor Characteristics Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Transistor Characteristics returned 74 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition
2Hysteresis behaviour of top-down fabricated ZnO nanowire transistors
3Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
4A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
5Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
6Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
7Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
8Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
9Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer
10AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
11Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
12Top-down fabricated ZnO nanowire transistors for application in biosensors
13Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
14Self-aligned ZnO thin-film transistors with 860 MHz fT and 2 GHz fmax for large-area applications
15All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process
16Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
17Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
18Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
19Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
20The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition
21Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs
22Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
23Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
24High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
25Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
26Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
27Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films
28Plasma-Enhanced Atomic Layer Deposition of HfO2 on Monolayer, Bilayer, and Trilayer MoS2 for the Integration of High-κ Dielectrics in Two-Dimensional Devices
29AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
30823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
31High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
32Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
33WS2 transistors on 300 mm wafers with BEOL compatibility
34Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
35600 V High-Performance AlGaN/GaN HEMTs with AlN/SiNx Passivation
36Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
37Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
38Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
39ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
40Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters
41Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation
42Combined PEALD Gate-Dielectric and In-Situ SiN Cap-Layer for Reduced Vth Shift and RDS-ON Dispersion of AlGaN/GaN HEMTs on 200 mm Si Wafer
43Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
44Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
45Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
46Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
47Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
48Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
49Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
50Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
51Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
52Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
53High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
54Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
55Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
56Plasma-Enhanced Atomic Layer Deposition of p-Type Copper Oxide Semiconductors with Tunable Phase, Oxidation State, and Morphology
57Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
58Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
59DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
60Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
61Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
62Nitride passivation of the interface between high-k dielectrics and SiGe
63AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
64Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
65Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
66Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
67Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
68Advances in the fabrication of graphene transistors on flexible substrates
69Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric
70Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer
71Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors