Transistor Characteristics Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Transistor Characteristics returned 69 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1600 V High-Performance AlGaN/GaN HEMTs with AlN/SiNx Passivation
2823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
3A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
4Advances in the fabrication of graphene transistors on flexible substrates
5Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
6ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
7AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
8AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
9All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process
10AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
11Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
12Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
13Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
14Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
15Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
16Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
17Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
18Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
19Combined PEALD Gate-Dielectric and In-Situ SiN Cap-Layer for Reduced Vth Shift and RDS-ON Dispersion of AlGaN/GaN HEMTs on 200 mm Si Wafer
20Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
21Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric
22Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
23Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
24Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
25Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation
26DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
27Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
28Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
29Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
30Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
31Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
32Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
33High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
34High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
35High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
36Hysteresis behaviour of top-down fabricated ZnO nanowire transistors
37Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs
38Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
39Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
40Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
41Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
42Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
43Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
44Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
45Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer
46Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
47Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
48Nitride passivation of the interface between high-k dielectrics and SiGe
49Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
50Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
51Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
52Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters
53Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
54Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
55Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
56Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
57Self-aligned ZnO thin-film transistors with 860 MHz fT and 2 GHz fmax for large-area applications
58Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
59Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
60The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition
61Top-down fabricated ZnO nanowire transistors for application in biosensors
62Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
63Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
64Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
65WS2 transistors on 300 mm wafers with BEOL compatibility
66ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition