Transistor Characteristics Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Transistor Characteristics returned 55 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
2A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
3Advances in the fabrication of graphene transistors on flexible substrates
4Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
5ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
6AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
7AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
8AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
9Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
10Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
11Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
12Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
13Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
14Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
15Combined PEALD Gate-Dielectric and In-Situ SiN Cap-Layer for Reduced Vth Shift and RDS-ON Dispersion of AlGaN/GaN HEMTs on 200 mm Si Wafer
16Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
17Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric
18Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
19Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
20Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation
21DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
22Demonstration of flexible thin film transistors with GaN channels
23Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
24Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
25Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
26Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
27Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
28High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
29High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
30Hysteresis behaviour of top-down fabricated ZnO nanowire transistors
31Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs
32Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
33Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
34Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
35Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
36Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
37Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
38Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
39Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
40Nitride passivation of the interface between high-k dielectrics and SiGe
41Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
42Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
43Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters
44Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
45Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
46Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
47Self-aligned ZnO thin-film transistors with 860 MHz fT and 2 GHz fmax for large-area applications
48Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
49Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
50The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition
51Top-down fabricated ZnO nanowire transistors for application in biosensors
52Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
53Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
54Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
55WS2 transistors on 300 mm wafers with BEOL compatibility


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