| 1 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 2 | Plasma-enhanced ALD system for SRF cavity |
| 3 | Optical and Electrical Properties of AlxTi1-xO Films |
| 4 | Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride |
| 5 | Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition |
| 6 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
| 7 | Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition |
| 8 | Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment |
| 9 | Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia |
| 10 | Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure |
| 11 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 12 | TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films |
| 13 | Self-limiting growth of GaN using plasma-enhanced atomic layer deposition |
| 14 | Deposition and Plasma Measurements of Zr-Oxide Films with Low Impurity Concentrations by Remote PEALD |
| 15 | Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting |
| 16 | Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods |
| 17 | Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications |
| 18 | Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect |
| 19 | Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition |
| 20 | Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma |
| 21 | Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition |
| 22 | Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions |
| 23 | Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods |
| 24 | Plasma enhanced atomic layer deposition of gallium sulfide thin films |
| 25 | Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma |
| 26 | Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma |
| 27 | Optical in situ monitoring of plasma-enhanced atomic layer deposition process |
| 28 | Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment |
| 29 | Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks |
| 30 | Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2 |
| 31 | Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications |
| 32 | Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma |
| 33 | The effects of layering in ferroelectric Si-doped HfO2 thin films |
| 34 | Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes |
| 35 | Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications |
| 36 | Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma |
| 37 | Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma |
| 38 | Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects |
| 39 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
| 40 | Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition |
| 41 | Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric |
| 42 | Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon |
| 43 | Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition |
| 44 | Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications |
| 45 | Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries |
| 46 | Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment |
| 47 | New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se2 thin film solar cell |
| 48 | A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu |
| 49 | Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition |
| 50 | Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas |
| 51 | Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics |
| 52 | Effect of Crystal Structure and Grain Size on Photo-Catalytic Activities of Remote-Plasma Atomic Layer Deposited Titanium Oxide Thin Film |
| 53 | Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique |
| 54 | Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method |
| 55 | Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition |
| 56 | Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma |
| 57 | Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects |
| 58 | Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity |
| 59 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
| 60 | Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition |
| 61 | Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics |
| 62 | In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition |
| 63 | Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries |
| 64 | The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD |
| 65 | Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies |
| 66 | Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon |
| 67 | Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel |
| 68 | Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O |
| 69 | Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films |
| 70 | Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process |
| 71 | Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant |
| 72 | Atomic layer deposition of titanium nitride for quantum circuits |
| 73 | Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide |
| 74 | Atomic layer deposition of InN using trimethylindium and ammonia plasma |
| 75 | Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications |
| 76 | Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3 |
| 77 | Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma |
| 78 | Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes |
| 79 | Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash |
| 80 | GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation |
| 81 | Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor |
| 82 | Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process |
| 83 | Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method |
| 84 | Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN |
| 85 | Atomic layer deposition of high purity Ga2O3 films using liquid pentamethylcyclopentadienyl gallium and combinations of H2O and O2 plasma |
| 86 | Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process |
| 87 | Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer |
| 88 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide |
| 89 | Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study |
| 90 | Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques |
| 91 | Layer-by-layer epitaxial growth of GaN at low temperatures |
| 92 | Gadolinium nitride films deposited using a PEALD based process |
| 93 | ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition |
| 94 | GeSbTe deposition for the PRAM application |
| 95 | Using top graphene layer as sacrificial protection during dielectric atomic layer deposition |
| 96 | Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films |
| 97 | Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection |
| 98 | The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films |
| 99 | Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 100 | Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications |
| 101 | Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma |
| 102 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
| 103 | A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films |
| 104 | Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation |
| 105 | Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl |
| 106 | Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx |
| 107 | Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating |
| 108 | Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas |
| 109 | Atomic layer deposition of titanium nitride from TDMAT precursor |
| 110 | Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM |
| 111 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
| 112 | Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics |
| 113 | Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition |
| 114 | Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition |
| 115 | Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric |
| 116 | Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition |
| 117 | Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell |
| 118 | The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications |
| 119 | AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers |
| 120 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
| 121 | Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma |
| 122 | Fully CMOS-compatible titanium nitride nanoantennas |
| 123 | Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices |
| 124 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
| 125 | The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2 |
| 126 | Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films |
